?2002 fairchild semiconductor corporation rev. a1, august 2002 FJZ945 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted thermal characteristics t c =25 c unless otherwise noted h fe classification & marking symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 150 ma p c collector power dissipation 100 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =100 a, i e =0 60 v bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 50 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 5 v i cbo collector cut-off current v cb =40v, i e =0 0.1 a i ebo emitter cut-off current v eb =3v, i c =0 0.1 a h fe dc current gain v ce =6v, i c =1.0ma 40 700 v ce (sat) collector-emitter saturation voltage i c =100ma, i b =10ma 0.15 0.3 v f t current gain bandwidth product v ce =6v, i c =10ma 300 mhz c ob output capacitance v cb =6v, i e =0, f=1mhz 2.5 pf nf noise figure v ce =6v, i c =0.5ma f=1khz, r s =500 ? 4.0 db symbol parameter max. units r ja thermal resistance, junction to ambient 1250 c/w classification r o y g l h fe 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 marking c2 c3 c1 c4 c5 FJZ945 audio frequency amplifier & high frequency osc. ? complement to fjz733 ? collector-base voltage : v cbo =60v ? high current gain bandwidth product : f t =300mhz (typ.) 1. base 2. emitter 3. collector c1 marking 1 2 3 sot-623f
?2002 fairchild semiconductor corporation FJZ945 rev. a1, august 2002 typical characteristics figure 1. static characteristic figure 2. transfer characteristic figure 3. dc current gain figure 4. base-emitter saturation voltage figure 5. collector-emitter saturation voltage figure 6. output capacitance 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 i b = 400 a i b = 350 a i b = 300 a i b = 200 a i b = 150 a i b = 100 a i b = 250 a i b = 50 a i c [ma], collector current v ce [v], collector-emitter voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 125 0 c 25 0 c -25 0 c v ce =6v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1000 10 100 ta=25 0 c ta=125 0 c ta=-25 0 c v ce =6v h fe , dc current gain i c [ma], collector current 1e-3 0.01 0.1 1 0.1 1 ta=125 0 c ta=25 0 c ta=-25 0 c i c =10i b v be (sat)[v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 0.01 0.1 1 ta=125 0 c ta=25 0 c ta=-25 0 c i c =10i b v ce (sat)[v], saturation voltage i c [a], collector current 1 10 100 1000 0.1 1 10 100 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage
?2002 fairchild semiconductor corporation rev. a1, august 2002 FJZ945 typical characteristics (continued) figure 7. current gain bandwidth product 0.1 1 10 100 1 10 100 1000 v ce = 6v f t [mhz], current gain bandwidth product i c [ma], collector current
FJZ945 package dimensions dimensions in millimeters ?2002 fairchild semiconductor corporation rev. a1, august 2002 sot-623f
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